Wiring substrate, solid-state imaging apparatus using the same, and manufacturing method thereof

ABSTRACT

In one embodiment, a miniaturized solid-state imaging apparatus includes a body having a cavity for mounting a semiconductor chip therein. The body has an overhanging portion extending toward the cavity. Further, a lead is disposed within the body. The lead has one end exposed through a top surface of the body and the other end exposed through a bottom surface of the body for electrical connection thereof.

This application claims priority from Korean Patent Application No.10-2004-0009029 filed on Feb. 11, 2004, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein byreference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a solid-state imaging apparatus, and moreparticularly, to a solid-state imaging apparatus in which asemiconductor chip has a first wiring substrate electrically coupledbetween a lens unit and a second wiring substrate.

2. Description of the Related Art

In general, mobile electronic devices, such as personal digitalassistances (PDAs), digital still cameras (DSCs), or mobile phones, havea built-in solid-state imaging apparatus in which a semiconductor chipand a lens are combined. In a mobile phone equipped with a small digitalcamera, an image of a calling party is picked up by the camera and inputto the mobile phone as image data, and the input image data may betransmitted to a called party.

As such mobile equipment has become smaller and smaller, demand forminiaturized solid-state imaging apparatuses used in such mobileequipment has increased. In order to meet such demand for miniaturizedsolid-state imaging apparatuses, development of semiconductor packagesin which a lens and a semiconductor chip are incorporated is under way.

FIG. 1 is a schematic diagram of a conventional solid-state imagingapparatus 100. The conventional solid-state imaging apparatus 100includes a lens mounting portion 150 to which a solid-state imaging lens160 is attached, a flexible printed circuit board (FPC) 110 and asemiconductor chip 140.

Here, the lens mounting portion 150, to which the solid-state imaginglens 160 and an IR cut filter 165 are attached, is coupled to the topsurface of the FPC 110 with an adhesive. The semiconductor chip 140converts light from the solid-state imaging lens 160 into an imagesignal and to process the image signal. The semiconductor chip 140 ismounted on the FPC 110 and is coupled to pads formed on a predeterminedregion of the top surface of the FPC 110 by bonding wires 145.

Also, development of integrated semiconductor devices having a passiveelement 120, such as a resistor or capacitor, mounted in the solid-stateimagine apparatus 100 is under way.

That is, the passive element 120 can be mounted on a predeterminedregion of the FPC 110. Referring to FIG. 1, the passive element 120 ismounted near a portion where the semiconductor chip 140 is adhered. Inparticular, the passive element 120 is mounted in the lens mountingportion 150 to form the integrated solid-state imagine apparatus 100.

When the passive element 120 is mounted within the solid-state imagingapparatus 100, Referring to FIG. 1, a horizontal length (L1) of thesolid-state imaging apparatus 100 is increased, thereby impedingminiaturization of the solid-state imaging apparatus 100.

SUMMARY OF THE INVENTION

To solve the above-described problems, the invention provides asolid-state imaging apparatus which has a reduced horizontal length forminiaturization and a manufacturing method thereof.

Also, the invention provides a wiring substrate suitable for thesolid-state imaging apparatus.

In one embodiment, a miniaturized solid-state imaging apparatus includesa body having a cavity for mounting a semiconductor chip therein. Thebody has an overhanging portion extending toward the cavity. Further, alead is disposed within the body. The lead has one end exposed through atop surface of the body and the other end exposed through a bottomsurface of the body for electrical connection thereof.

In an aspect of the invention, a solid-state imaging apparatus comprisesa body having a cavity defining an area on which a semiconductor chip ismounted; a overhanging portion extending inward from an internal surfaceof the body toward the cavity; and a lead having one end coupled to thetop surface of the body and the other end coupled to the bottom surfaceof the body.

In another aspect of the invention, a wiring substrate comprises a bodyhaving a cavity defining an area on which a semiconductor chip ismounted; an overhanging portion extending inward from an internalsurface of the body toward the cavity; and a lead having one endextending inward from the overhanging portion of the body toward thecavity and the other end coupled to the bottom surface of the body.

In still another aspect of the invention, a solid-state imagingapparatus comprises a lens unit having a solid-state imaging lens; afirst wiring substrate having a cavity; an overhanging portion havingone end extending inward from an internal surface thereof toward thecavity and the other end coupled to the bottom surface of the lens unitsuch that the solid-state imaging lens and the cavity are opposite toand face each other; a second wiring substrate electrically coupled tothe first wiring substrate; and a semiconductor chip adhered to a topsurface of the second wiring substrate to be seated within the cavityand electrically coupled to the first wiring substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the invention will becomemore apparent by describing in detail preferred embodiments thereof withreference to the attached drawings.

FIG. 1 is a cross-sectional diagram schematically showing a conventionalsolid-state imaging apparatus.

FIG. 2A is a cross-sectional view of a solid-state imaging apparatusaccording to a first embodiment of the invention, and FIG. 2B is apartly exploded perspective view of a first wiring substrate shown inFIG. 2A.

FIGS. 3A through 3D are cross-sectional views illustrating a method ofmanufacturing a solid-state imaging semiconductor apparatus shown inFIG. 2A.

FIGS. 4A through 4E are plan views of FIGS. 3A through 3D and FIG. 2A,respectively.

FIG. 5 is a cross-sectional view of a solid-state imaging apparatusaccording to a second embodiment of the invention.

FIG. 6 is a cross-sectional view of a solid-state imaging apparatusaccording to a third embodiment of the invention.

FIG. 7 is a cross-sectional view of a solid-state imaging apparatusaccording to a fourth embodiment of the invention.

FIG. 8A is a cross-sectional view of a solid-state imaging apparatusaccording to a fifth embodiment of the invention, and FIG. 8B is apartly exploded perspective view of a first wiring substrate shown inFIG. 8A.

FIG. 9 is a cross-sectional view of a solid-state imaging apparatusaccording to a sixth embodiment of the invention.

FIG. 10 is a cross-sectional view of a solid-state imaging apparatusaccording to a seventh embodiment of the invention.

FIG. 11 is a cross-sectional view of a solid-state imaging apparatusaccording to an eighth embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Advantages and features of the invention and methods of accomplishingthe same may be understood more readily by reference to the followingdetailed description of preferred embodiments and the accompanyingdrawings. The invention may, however, be embodied in many differentforms and should not be construed as being limited to the embodimentsset forth herein. Rather, these embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey thescope of various embodiments of the invention to those skilled in theart. The scope of the invention is defined only by the appended claims.Like numbers refer to like elements throughout this description and thedrawings.

An embodiment of the invention will now be described with reference toFIGS. 2A through 4E.

FIG. 2A is a cross-sectional view of a solid-state imaging apparatus 200and FIG. 2B is a partly exploded perspective view of a first wiringsubstrate 230 shown in FIG. 2A.

Referring to FIGS. 2A and 2B, the solid-state imaging apparatus 200includes a lens unit 250, a first wiring substrate 230, a second wiringsubstrate 210, and a semiconductor chip 240. The lens unit 250 has asolid-state imaging lens 260 attached thereto.

The lens unit 250 has a light receiving hole 252 formed at a portionthrough which light passes. To the light receiving hole 252 is attachedthe solid-state imaging lens 260. Preferably, an IR cut filter 265 or ahigh frequency cut filter is installed at a portion through which thelight has passed. For the sake of convenience, the invention will bedescribed in conjunction with an IR cut filter by way of example.

The first wiring substrate 230 includes a body 232 and a lead 234. Thebody 232 may be coupled to the bottom of the lens unit 250 by anadhesive (not shown). The body 232 includes a cavity 236 disposed belowthe solid-state imaging lens 260. The cavity 236 defines an area formounting a semiconductor chip 240 in the body 232. Referring to FIG. 2B,a overhanging portion 238 having an upper portion extending inward withrespect to the cavity 236 is formed in the body 232. Because the bottomof the first wiring substrate 230 is coupled to the upper surface of thesecond wiring substrate 210, a predetermined space is formed between theoverhanging portion 238 and the second wiring substrate 210. Therefore,a passive element 220 can be mounted in the predetermined space betweenthe overhanging portion 238 and the second wiring substrate 210. Aresistor, a capacitor, or an inductor may be used as the passive element220.

On the other hand, the lead 234 can be formed within the body 232. Oneend 234 a of the lead 234 is exposed through the top surface of the body232, and the other end 234 b of the lead 234 is exposed through thebottom surface of the body 232. Examples of typical materials of thelead 234 include Cu and an alloy of Ni and Fe. The lead 234 may be anetching type, in which a base panel is etched away except apredetermined portion thereof, or a stamping type, in which a base panelis pressed into a predetermined pattern using a mold. The lead 234 maybe preferably plated with a noble metal such as Ni or Au.

Examples of the first wiring substrate 230, including the body 232 andthe lead 234, include, but not limited to, PCB, ceramic leadless chipcarrier (CLCC), pre-molded leadless chip carrier (PLCC), and the like.The PLCC is made of an epoxy molding compound (EMC), for example.However, one skilled in the art will appreciate that the above-statedexamples of the first wiring substrate 230 are provided for illustrationonly and the present invention is not limited thereto.

The second wiring substrate 210 is electrically coupled to the firstwiring substrate 230. Thus, the semiconductor chip 240, electricalconnection means, e.g., a bonding wire 245, the first wiring substrate230, and the second wiring substrate 210 are electrically coupled to oneanother, and the solid-state imaging device 200 and external body (notshown) are electrically coupled through the second wiring substrate 210.In the illustrative embodiment of the invention, FPC can be used as thesecond wiring substrate 210.

Referring to FIGS. 2A and 2B, the semiconductor chip 240 is bonded tothe second wiring substrate 210 so that it is seated within the cavity236 of the body 232. An electrode pad (not shown) formed on the topsurface of the semiconductor chip 240 and the one end 234 a of the lead234 are electrically coupled to each other by electrical connectionmeans 245. In the illustrative embodiment of the invention, theelectrical connection mean 245 may be a bonding wire. However, otherelectrical connection means can be used within the spirit and the scopeof the present invention.

The semiconductor chip 240 may be a single semiconductor chip in which asolid-state imaging device and an image processing device areincorporated.

The solid-state imaging device preferably includes a group ofphotoelectric conversion elements for converting light from thesolid-state imaging lens 260 into an image signal, by methods andelements familiar to those skilled in the art. For example, thesolid-state imaging device includes a photoelectric conversion unit(sensor), a driving circuit, an audio-to-digital (A/D) converting unit,a signal processing unit, and a semiconductor circuit. The photoelectricconversion unit preferably has a group of photoelectric conversionelements arranged in a two-dimensional matrix, forming a CMOS imagesensor (CIS) unit. The driving circuit unit sequentially drives thephotoelectric conversion elements to obtain signal charges. The A/Dconverting unit converts the signal charges into digital signals. Thesignal processing unit processes the digital signals to output imagesignals. The semiconductor circuit has an exposure controller formed onthe same semiconductor chip, the exposure controller electricallycontrolling the exposure time based on the output level of the digitalsignal. The semiconductor chip may include a charged coupled device(CCD).

The image processing chip processes an image signal output from thesemiconductor chip.

The semiconductor chip 240 forms an image of an object on a sensor ofthe semiconductor chip 240 through the solid-state imaging lens 260 andthe IR cut filter 265, and photoelectrically converts the object imageand outputs the converted image as an image signal in either a digitalor analog form. Then the semiconductor chip 240 processes the imagesignal and outputs the same to the lead 234.

The sensor of the semiconductor chip 240 is disposed below thesolid-state imaging lens 260.

As described above, the semiconductor chip 240 and the second wiringsubstrate 210 are electrically coupled to each other through the firstwiring substrate 230 having the overhanging portion 238, rather thanbeing directly coupled to each other as in the prior art. Thus, comparedto the conventional solid-state imaging apparatus shown in FIG. 1, thereis no change in the height of the solid-state imaging apparatus 200.However, since the passive element 220 is mounted in a predeterminedspace between the overhanging portion 238 of the first wiring substrate230 and the second wiring substrate 210, and it is not necessary to forma pad for electrical connection with the semiconductor chip 240 on thesecond wiring substrate 210, the solid-state imaging apparatus 200having a reduced horizontal length (L2) can be realized.

A manufacturing method of the solid-state imaging apparatus 200 shown inFIG. 2A will now be explained with reference to FIGS. 3A through 3D andFIGS. 4A through 4E.

FIGS. 3A through 3D are cross-sectional views illustrating a method ofmanufacturing the solid-state imaging apparatus 200 shown in FIG. 2A.FIGS. 4A through 4E are plan views of FIGS. 3A through 3D and FIG. 2A,respectively.

Referring to FIGS. 3A and 4A, the second wiring substrate 210 connectsthe solid-state imaging apparatus 200 with an external system (notshown). Bonding pads 215 are formed on the second wiring substrate 210.The second wiring substrate 210 comprises a connection terminal 217electrically coupled to the external system, and bonding pads 215defining an area on which the passive element 220 is mounted (FIG. 4B).

Referring to FIGS. 3A and 4B, the passive element 220 is mounted on thesecond wiring substrate 210. The passive element 220 is preferablyarranged near an area where the semiconductor chip 240 is mounted, whichwill later be described later. Generally, the passive element 220 isarranged on the second wiring substrate 210 by a surface mounttechnology (SMT).

Referring to FIGS. 3C and 4C, the first wiring substrate 230 having theoverhanging portion 238 is mounted on the second wiring substrate 210.The passive element 220 is positioned under the overhanging portion 238.

Referring to FIGS. 3D and 4D, the semiconductor chip 240 is mounted onthe second wiring substrate 210, using conventional techniques andmaterials, so that it is seated within the cavity 236 of the firstwiring substrate 230.

Referring to FIGS. 2A and 4E, the lens unit 250 includes the solid-stateimaging lens 260 and the IR cut filter 265. The lens unit 250 is coupledto the upper portion of the first wiring substrate 230 usingconventional techniques. Then, bond pads 242 formed on the semiconductorchip 240 are electrically connected to the one end 234 a of the lead 234via electrical connection means, for example, the bond wire 245.

Another embodiment of the invention will now be described with referenceto FIG. 5, in which elements the same as or corresponding to those ofthe previous embodiment shown in FIGS. 2A through 4E are denoted by thesame reference numerals and an explanation thereof will not be given forsimplicity.

FIG. 5 is a cross-sectional view of a solid-state imaging apparatus 500according to another embodiment of the invention.

Referring to FIG. 5, the solid-state imaging apparatus 500 is differentfrom the solid-state imaging apparatus 200 according to the previousembodiment in that a second wiring substrate 510 used is of a sockettype. The socket-type second wiring substrate 510 used in thisembodiment has an external connection terminal 515 formed at the backside or lower portion of the second wiring substrate 510.

Still another embodiment of the invention will now be described withreference to FIG. 6, in which elements the same as or corresponding tothose of the previous embodiment shown in FIGS. 2A through 4E aredenoted by the same reference numerals and an explanation thereof willnot be given.

FIG. 6 is a cross-sectional view of a solid-state imaging apparatus 600according to still another embodiment of the invention.

Referring to FIG. 6, the solid-state imaging apparatus 600 is differentfrom the solid-state imaging apparatus 200 in that a second wiringsubstrate 610 used is of a socket type. The socket-type second wiringsubstrate 610 has an external connection terminal 615 formed on alateral surface of the second wiring substrate 610.

Yet another embodiment of the invention will now be described withreference to FIG. 7, in which elements the same as or corresponding tothose of the previous embodiment shown in FIGS. 2A through 4E aredenoted by the same reference numerals and an explanation thereof willnot be given.

Referring to FIG. 7, the illustrative embodiment is different from thefirst-described embodiment in that a Rigid-Flexible PCB (RF-PCB) is usedas a second wiring substrate 710. The RF-PCB 710 is a printed circuitsubstrate having a multilayered, rigid PCB 714, which is generally usedin the art, and a flexible PCB 712 combined therein, enablingthree-dimensional circuit connection, thereby realizing highlyfunctional, miniaturized portable electronic devices. There is nolimitation in numbers of the rigid PCB 714, 716, and the flexible PCB712 used.

Still another embodiment of the invention will now be described withreference to FIGS. 8A and 8B, in which elements the same as orcorresponding to those of the first-described embodiment shown in FIGS.2A through 4E are denoted by the same reference numerals and anexplanation thereof will not be given.

FIG. 8A is a cross-sectional view of a solid-state imaging apparatus 800according to this embodiment of the invention, and FIG. 8B is a partlyexploded perspective view of a first wiring substrate 830 shown in FIG.8A.

As shown FIG. 8A, the solid-state imaging apparatus 800 of the inventioncomprises a lens unit 205 to which the solid-state imaging lens 260 isattached, the first wiring substrate 830, a second wiring substrate 210,and a semiconductor chip 240. The solid-state imaging apparatus 800according to the illustrative embodiment is different from thesolid-state imaging apparatus 200 according to the first-describedembodiment in that the structure of the first wiring substrate 830 ischanged, and electrical connection means 845 connecting thesemiconductor chip 240 to the first wiring substrate 830 is a flip-chipbonding pad, instead of the bonding wire.

Referring to FIGS. 8A and FIG. 8B, the first wiring substrate 830includes a body 832 and a lead 834. The body 832 is coupled to the lowerportion of the lens unit 250, for example, by an adhesive. The body 832has a cavity 836 disposed under the solid-state imaging lens 260. Thecavity 236 is an area where the semiconductor 240 is mounted.

Referring to FIG. 8B, the body 832 includes an overhanging portion 838extending inward toward the cavity 836. Because the bottom of the firstwiring substrate 830 and the second wiring substrate 210 are coupled, apredetermined space is formed between the overhanging portion 838 of thefirst wiring substrate 830 and the second wiring substrate 210.Therefore, a passive element 220 can be mounted in the predeterminedspace between the overhanging portion 838 of the first wiring substrate830 and the second wiring substrate 210. The lead 834 is formed withinthe body 832. One end 834 a of the lead 834 extends toward the cavity836, and the other end 834 b of the lead 834 is exposed through thebottom surface of the body 832. The lead 834 may include Cu and an alloyof Ni and Fe. The lead 834 may be an etching type, in which a base panelis etched away except a predetermined portion thereof, and a stampingtype, in which a base panel is pressed into a predetermined patternusing a mold. The lead 834 is preferably plated with a noble metal suchas Ni or Au.

The first wiring substrate 830, including the body 832 and the lead 834,may include, but is not limited to, PCB, CLCC, PLCC, and the like. ThePLCC is made of an epoxy molding compound (EMC), for example. However,the above-stated examples of the first wiring substrate 830 are providedfor illustration only.

Referring to FIGS. 8A and 8B, the semiconductor chip 240 is bonded tothe second wiring substrate 210 so that it is seated within the cavity836 of the body 832. An electrode pad (not shown) formed on the topsurface of the semiconductor chip 240 and the one end 834 a of the lead834 are electrically coupled to each other by electrical connectionmeans 845. In the illustrative embodiment of the invention, theelectrical connection mean 845 is preferably a conductive for flip chipbonding.

Still another embodiment of the invention will now be described withreference to FIG. 9, in which elements the same as or corresponding tothose of the embodiment shown in FIGS. 8A through 8B are denoted by thesame reference numerals and an explanation thereof will not be given.

FIG. 9 is a cross-sectional view of a solid-state imaging apparatus 900according to still another embodiment of the invention.

Referring to FIG. 9, the solid-state imaging apparatus 900 according tothe illustrative embodiment is different from the solid-state imagingapparatus 800 according to the last-described embodiment in that asecond wiring substrate 510 is of a socket type. The socket-type secondwiring substrate 510 has an external connection terminal 515 formed atthe back side or lower portion of the second wiring substrate 510.

Still another embodiment of the invention will now be described withreference to FIG. 10, in which elements the same as or corresponding tothose of the embodiment shown in FIGS. 8A and 8B are denoted by the samereference numerals and an explanation thereof will not be given.

Referring to FIG. 10, the solid-state imaging apparatus 1000 accordingto the illustrative embodiment is different from the solid-state imagingapparatus 800 according to the embodiment shown in FIGS. 8A and 8B inthat a second wiring substrate 610 is of a socket type. The socket-typesecond wiring substrate 610 has an external connection terminal 615formed on a lateral surface thereof.

Yet another embodiment of the invention will now be described withreference to FIG. 11, in which elements the same as or corresponding tothose of the embodiment shown in FIGS. 8A and 8B are denoted by the samereference numerals and an explanation thereof will not be given.

FIG. 11 is a cross-sectional view of a solid-state imaging apparatus1100 according to this embodiment of the invention.

Referring to FIG. 11, the solid-state imaging apparatus 1100 isdifferent from the solid-state imaging apparatus 800 in that arigid-flexible PCB (RF-PCB) is used as a second wiring substrate 710.The RF-PCB 710 is a combined printed circuit substrate having amultilayered, rigid PCB 714, 716, which is generally used in the art,and a flexible PCB 712 combined therein, enabling three-dimensionalcircuit connection, thereby realizing highly functional, miniaturizedportable electronic devices. Here, there is no limitation in numbers ofthe rigid PCB 714, 716, and the flexible PCB 712 used.

While the invention has been particularly shown and described withrespect to illustrative embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formand details may be made therein without departing from the spirit andscope of the invention which should be limited only by the scope of theappended claims. Thus, preferred embodiments of the invention disclosedabove are used in a generic and descriptive sense only and not forpurposes of limitation.

As described above, in the solid-state imaging apparatus according tothe invention, rather than directly connecting of a semiconductor chipwith a second wiring substrate, the semiconductor chip and the secondwiring substrate are electrically coupled by means of a first wiringsubstrate having an overhanging portion. Passive elements can be mountedin a predetermined space between the overhanging portion of the firstwiring substrate and the second wiring substrate. Also, it is notnecessary to form a pad on the second wiring substrate for the purposeof electrically connecting with the semiconductor chip, which reduces ahorizontal length of the apparatus, thereby achieving a miniaturizedsolid-state imaging apparatus.

1. An apparatus comprising: a lens unit having an imaging lens; a firstwiring substrate having a cavity and an overhanging portion extendingtoward the cavity, a top surface of the first wiring substrate coupledto a bottom surface of the lens unit, the imaging lens and the cavityfacing each other; a second wiring substrate, a bottom surface of thefirst wiring substrate coupled to a top surface of the second wiringsubstrate; a passive element mounted on the top surface of the secondwiring substrate and disposed under the overhanging portion; and asemiconductor chip mounted on the top surface of the second wiringsubstrate within the cavity and electrically coupled to the first wiringsubstrate.
 2. The apparatus of claim 1, wherein the semiconductor chipis adapted to convert light from the solid-state imaging lens into animage signal and to process the image signal.
 3. The apparatus of claim1, wherein the first wiring substrate is one selected from the groupconsisting of a printed circuit board (PCB), a ceramic leadless chipcarrier (CLCC), and a pre-molded leadless chip carrier (PLCC).
 4. Theapparatus of claim 1, wherein the second wiring substrate is oneselected from the group consisting of a flexible printed circuit board(FPC), a combination of one or more flexible PCBs and one or more rigidPCBs, and a socket type package.
 5. The apparatus of claim 1, whereinthe first wiring substrate and the semiconductor chip are electricallycoupled by a bonding wire.
 6. The apparatus of claim 1, wherein thefirst wiring substrate and the semiconductor chip are electricallycoupled by a conductive bump.
 7. The apparatus of claim 1, furthercomprising an IR cut filter which is spaced a predetermined distanceapart from and disposed between the imaging lens and the semiconductorchip, wherein the IR cut filter is affixed to the lens unit.
 8. Theapparatus of claim 1, further comprising an external connection terminalformed on a lateral surface of the second wiring substrate.
 9. A methodof manufacturing an apparatus, the method comprising: providing a secondwiring substrate; providing a first wiring substrate on the secondwiring substrate, the second wiring substrate electrically coupled tothe first wiring substrate, the first wiring substrate having a cavityand an overhanging portion extending toward the cavity; mounting asemiconductor chip on a top surface of the second wiring substratewithin the cavity; electrically coupling the semiconductor chip to thefirst wiring substrate; and coupling a lens unit having an imaging lensto a top surface of the first wiring substrate.
 10. The method of claim9, wherein electrically coupling the semiconductor chip to the firstwiring substrate comprises flip chip bonding.
 11. The method of claim 9,electrically coupling the semiconductor chip to the first wiringsubstrate comprises wire bonding bonding.
 12. The method of claim 9,further comprising forming an external connection terminal on a lateralsurface of the second wiring substrate.
 13. The method of claim 9,wherein the first wiring substrate is one selected from the groupconsisting of a printed circuit board (PCB), a ceramic leadless chipcarrier (CLCC), and a pre-molded leadless chip carrier (PLCC).
 14. Theapparatus of claim 9, wherein the second wiring substrate is oneselected from the group consisting of a flexible printed circuit board(FPC), a combination of one or more flexible PCBs and one or more rigidPCBs, and a socket type package.